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T. Opalińska, B. Ulejczyk, L. Karpiński, K. Schmidt-Szałowski

Deposition of thin films based on silica on polycarbonates by pulsed dielectric

barier discharge (in English)

Polimery 2004, No 4, 257


DOI: dx.doi.org/10.14314/polimery.2004.257


Summary

The process of thin organo-silica film deposition on polycarbonate in pulsed dielectric barrier discharge was studied. Thin film was deposited from the gas mixture comprising helium, oxygen and tetraethoxysilane under atmospheric pressure without pre-heating of polycarbonate plate. Influences of process parameters, namely the current of single pulse of discharge, PC plate arrangement and position, and plasma-generating gas composition on the deposition rate were investigated. Deposition rate increased from 3.4 to 40.8 nm/min when the current of single pulse increased from 50 to 100 A. The presence of oxygen in plasma-generating gas was necessary to thin organosilicon film forming, but the excess of O2 concentration caused decreasing of film deposition rate, for example: deposition rate was 14.9 or 6.0 nm/min when concentration of O2 was changed from 5 to 20% by vol. In the films, the following elementaly composition (Si, C, O, H) and morphology of deposited films were characterized. These films were smooth and transparent.


Keywords: pulsed discharge, tetraethoxysilane, thin films, polycarbonates


T. Opalińska, B. Ulejczyk, L. Karpiński, K. Schmidt-Szałowski

Deposition of thin films based on silica on polycarbonates by pulsed dielectric barier discharge (in English)